Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors

We have investigated the dc characteristics of InGaAs/AlGaAs modulation doped field effect transistors in which a layer of self-organized InAs quantum dots is inserted adjacent to the pseudomorphic quantum well channel. Distinct steps and a negative differential resistance are observed in the current–voltage characteristics at room temperature and lower temperatures. These are attributed to conduction through the bound states in the quantum dots. © 1998 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70192/2/APPLAB-72-26-3509-1.pd