Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy

The heterostructure conduction band offset, ΔEc,ΔEc, in InAs/GaAs self-organized quantum dots has been measured by deep level transient spectroscopy. Measurements were made with Au–Al0.18Ga0.82AsAu–Al0.18Ga0.82As Schottky diodes in which the multilayer dots are embedded in the ternary layer. The estimated value of the band offset ΔEc = 341±30 meV.ΔEc=341±30meV. © 2000 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69734/2/APPLAB-76-18-2571-1.pd