Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature

We have observed a degradation in the epitaxial layer quality of AlInAs when it is grown by molecular beam epitaxy at a substrate temperature of about 400 °C compared to that for alloys grown at 300 and 500 °C. The barrier height and ideality factor of Ti– and Au–AlInAs Schottky diodes also exhibit large spatial variations and dependence on growth temperatures. The observed phenomena can be explained by invoking a kinetic growth model or thermodynamic phase equilibria in the growing surface layer. © 1996 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69717/2/APPLAB-68-2-220-1.pd