Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

This research was supported by the National Science Center of Poland within Grant No. 2011/02/A/ST3/00152.We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as non-classical light emitters for long-distance fiber-based secure communication technologies.PostprintPublisher PDFPeer reviewe