Spectroscopic properties of BN layers

International audienceh-BN is a wide band gap semiconductor (6.4 eV), which can be synthesized, as graphite, its carbon analog, as bulk crystallites, nanotubes and layers. These structures meet a growing interest for deep UV LED and graphene engineering. In this talk, we will report on the interplay between the structure, defects and luminescence properties of different BN structures and how these properties can be further exploited for the characterization of h-BN layers as a function of their thickness