Synthesis and Characterisation of SnX(As0.4Se0.3Te0.3),00.X13; Glasses

Results of measurements of the mean atomic volume (V), the glass transition13; temperature (Tg), the activation energy for glass transition (Et) and the d. c.13; electrical conductivity (a) for nine glass compositions of the Sn-As-Se-Te13; system are reported and discussed. The compositions studied can be13; represented as Snx(Aso_4Seo_3Teo. 3) loo_x glasses, with the additive Sn ranging13; from 0 to 10 atomic per cent (at.xB0;/o) in the parent [0.5As2Se3-0.5As2Te3] i.e.13; the As0.4Seo.3Te0 3 glass.13; Changes in slope in the variations of V, T g , Et, and a are observed at the13; composition with a Sn content of 3.5 at.%. Analysis of the data suggest that13; for addition of Sn up to 3.5 at.% to the As0.4Seo.3Teo.3 glass, formation of13; SnTe, and excess As structural units (s.u.) take place in lieu of some of the13; original As2Se3 and As2Te3 S.U. of the parent glass. For Sngt;3.5 at.%,13; formation of SnTe, SnSe and excess As s.u_ are indicated