Add to ORKGA new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators
This thesis presents spin transport studies of ferromagnetic nano-scaled tunneling devices fabricate...
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxia...
The effects of the spin-orbit coupling (SOC) on the tunneling magnetoresistance of ferromagnet/semic...
A new approach in spintronics is based on spin-polarized charge transport phenomena governed by anti...
We observe spin-valve-like effects in nanoscaled thermally evaporated Co/AlO x /Au tunnel junctions....
International audienceWe present a theory of the anisotropy of tunneling magnetoresistance (ATMR) ph...
Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a n...
Spintronics discusses about fundamental physics and material science in mostly nanometer size struct...
Spintronics is a multidisciplinary research field and it explores phenomena that interlink the spin ...
We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/...
Spintronics is a multidisciplinary research field and it explores phenomena that interlink the spin ...
The ballistic conductance of Fe/MgO/Fe magnetic tunnel junctions depends significantly on the direct...
Tunneling anisotropic magnetoresistance (TAMR) is the difference in resistance of a magnetic tunnel ...
C 60 fullerenes are interesting molecular semiconductors for spintronics since they exhibit weak s...
Schebaum O, Fabretti S, Moodera JS, Thomas A. Spin-polarized tunneling in MgO-based tunnel junctions...
This thesis presents spin transport studies of ferromagnetic nano-scaled tunneling devices fabricate...
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxia...
The effects of the spin-orbit coupling (SOC) on the tunneling magnetoresistance of ferromagnet/semic...
A new approach in spintronics is based on spin-polarized charge transport phenomena governed by anti...
We observe spin-valve-like effects in nanoscaled thermally evaporated Co/AlO x /Au tunnel junctions....
International audienceWe present a theory of the anisotropy of tunneling magnetoresistance (ATMR) ph...
Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a n...
Spintronics discusses about fundamental physics and material science in mostly nanometer size struct...
Spintronics is a multidisciplinary research field and it explores phenomena that interlink the spin ...
We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/...
Spintronics is a multidisciplinary research field and it explores phenomena that interlink the spin ...
The ballistic conductance of Fe/MgO/Fe magnetic tunnel junctions depends significantly on the direct...
Tunneling anisotropic magnetoresistance (TAMR) is the difference in resistance of a magnetic tunnel ...
C 60 fullerenes are interesting molecular semiconductors for spintronics since they exhibit weak s...
Schebaum O, Fabretti S, Moodera JS, Thomas A. Spin-polarized tunneling in MgO-based tunnel junctions...
This thesis presents spin transport studies of ferromagnetic nano-scaled tunneling devices fabricate...
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxia...
The effects of the spin-orbit coupling (SOC) on the tunneling magnetoresistance of ferromagnet/semic...