Tunneling anisotropic magnetoresistance in C60-based organic spintronic systems

Wang, K.
Sanderink, J.G.M.
Bolhuis, T.
Wiel, W.G. van der
Jong, M.P. de

Publication date

January 2014

Publisher

American Physical Society

Abstract

C 60 fullerenes are interesting molecular semiconductors for spintronics since they exhibit weak spin-orbit and hyperfine interactions, which is a prerequisite for long spin lifetimes. We report spin-polarized transport in spin-valve-like structures containing ultrathin (<10 nm) C 60 layers, ferromagnetic (FM) epitaxial face-centered-cubic (fcc) Co (111) contacts, AlO x tunnel barriers, and nonmagnetic Al counter electrodes. Even though genuine spin-valve behavior cannot occur for only one FM contact, we find significant tunneling anisotropic magnetoresistance (TAMR) upon rotating the in-plane magnetization, originating from spin-orbit interaction (SOI) induced anisotropy of the fcc (111) Co bands. The uniaxial magnetocrystalline anis...

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Tunneling anisotropic magnetoresistance in C60-based organic spintronic systems

Abstract

Extracted data

Tunneling anisotropic magnetoresistance in C60-based organic spintronic systems

Abstract

Extracted data

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