The authors have studied high-field parallel transport of photoinjected carriers in GaAs quantum wells using femtosecond optical spectroscopy. They have directly observed the transient nonequilibrium distribution functions that occur during the field-induced acceleration of the electrons. At a high field (16 kV cm-1), a nonthermal high-energy tail in the distribution function is apparent during the first 150 fs, which is due to electrons ballistically accelerated from the band edge. At later times, the authors observe the relaxation of the applied electric field due both to radiation from the accelerating carriers and from the build-up of space charge as the electron and hole gases separate.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstre...
We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs mult...
In this thesis, we present a theoretical description of the many-body effects in semi-conductor quan...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs...
Motivated by the needs of understanding the physics and advancing the technology of high-speed devic...
With strong THz pulses, we measure ultrafast transport of electrons, holes, and an electron-hole pla...
We have investigated the transport of carriers in GaAs using time resolved optical spectroscopy with...
We have investigated the transport of carriers in GaAs using time resolved optical spectroscopy with...
We measure both electron and hole escape times from a GaAs-AlGaAs quantum well in an electric field ...
We have investigated the transport of carriers in GaAs using time resolved optical spectroscopy with...
We measure both electron and hole escape times from a GaAs-AlGaAs quantum well in an electric field ...
The distribution of hot electrons excited with femtosecond laser pulses is studied via spectrally re...
The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of...
Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitati...
The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of...
The dynamics of charge carriers in semiconductors are of fundamental importance for semiconductor ap...
We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs mult...
In this thesis, we present a theoretical description of the many-body effects in semi-conductor quan...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs...
Motivated by the needs of understanding the physics and advancing the technology of high-speed devic...
With strong THz pulses, we measure ultrafast transport of electrons, holes, and an electron-hole pla...
We have investigated the transport of carriers in GaAs using time resolved optical spectroscopy with...
We have investigated the transport of carriers in GaAs using time resolved optical spectroscopy with...
We measure both electron and hole escape times from a GaAs-AlGaAs quantum well in an electric field ...
We have investigated the transport of carriers in GaAs using time resolved optical spectroscopy with...
We measure both electron and hole escape times from a GaAs-AlGaAs quantum well in an electric field ...
The distribution of hot electrons excited with femtosecond laser pulses is studied via spectrally re...
The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of...
Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitati...
The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of...
The dynamics of charge carriers in semiconductors are of fundamental importance for semiconductor ap...
We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs mult...
In this thesis, we present a theoretical description of the many-body effects in semi-conductor quan...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs...