Hydrogen passivation of carbon P-b like centers at the 3C-and 4H-SiC/SiO2 interfaces in oxidized porous SiC

Cantin, Jean-Louis
Von Bardeleben, Jurgen
Ke, Y
Devaty, RP
Choyke, WJ

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Publication date

February 2006

DOI

10.1063/1.2179128

Publisher

AIP Publishing

ISSN

0003-6951

Citation count (estimate)

Abstract

International audienceThe effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (P-bC) centers at 3C- and 4H-SiC/SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400 degrees C and depassivation for temperatures above 850 degrees C. A dissociation energy of (4.3 +/- 0.3) eV has been determined for both polytypes. (c) 2006 American Institute of Physics

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Hydrogen passivation of carbon P-b like centers at the 3C-and 4H-SiC/SiO2 interfaces in oxidized porous SiC

Abstract

Extracted data

Hydrogen passivation of carbon P-b like centers at the 3C-and 4H-SiC/SiO2 interfaces in oxidized porous SiC

Abstract

Extracted data

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