ZnO : Mn as a member of II-VI : Mn family

Chikoidze, E.
Dumont, Y.
Von Bardeleben, Jurgen
Gleize, J.
Jomard, F.
Rzepka, E.
Berrerar, G.
Ferrand, D.
Gorochov, O.

Open link

Publication date

July 2007

DOI

10.1007/s00339-007-3947-3

Publisher

Springer Science and Business Media LLC

ISSN

0947-8396

Citation count (estimate)

Abstract

International audienceZnO:Mn thin films are grown by the metal organic chemical vapor deposition technique. Mn (x) varies in the 0 < x < 0.44 range. Vegard's law has been verified for the lattice parameters. Electron paramagnetic resonance (EPR) measurements prove the substitutional incorporation of Mn2+ on zinc sites. The behavior of the EPR line width regarding temperature is discussed. All ZnO:Mn layers show antiferromagnetic interaction and a J(1)/k(B)=-15 K effective exchange constant. The optical band gap of ZnO:Mn increases with the manganese concentration. Raman spectroscopy reveals a Mn-related scattering band