Vanadium dioxide devices for terahertz wave modulation: a study of wire grid structures

International audienceVandium dioxide (VO2) shows promise as the basis for a terahertz wave modulator due to its phase transition properties. Its insulator–metal-transition (IMT) can be induced either through temperature changes, optically or electronically. Recently, a metal-VO2 wire grid structure was proposed which was able to increase the modulation depth (MD) from 0.65 to 0.9, suggesting that these simple metallic structures could greatly increase the difference in terahertz transmission for the insulating and metallic states of VO2 based structures. In this paper, we have found that the increase in MD decreases with increasing VO2 conductivity in the metallic state, resulting in a maximum modulation depth of approximately 0.95 for wire grid structures that preserves a high transmission in the insulating state. Surprisingly, we find that deposition of VO2 on top of metallic structures results in reduced performance. However, we find that devices based upon VO2 alone can achieve unexpectedly high performance. In this work we present a device with a switchable wire-grid polariser effect over a broadband frequency range (from 0.3 to 2 THz). To our knowledge this is the first such broadband metamaterial based solely on VO2. The ability to switch on a metamaterial property like this to produce a polarisation effect is very useful for future terahertz optical devices such as rotators and waveplates