Bulk GaAs has undergone extensive research by several groups in order to ascertain its usefulness as a room temperature radiation spectrometer. The results of an experimental program studying the properties of detectors fabricated from bulk GaAs are summarized in this paper. Electric field models of the active region are compared with measured results. Limitations of bulk LEC GaAs as a material for radiation spectrometers are discussed.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/31641/1/0000575.pd
Vertical zone melt (VZM) bulk GaAs boules have been zone refined (ZR) and zone leveled (ZL) to reduc...
In this work, the different aspects of X-ray digital radiology are considered and the requirements o...
In this chapter, not only are the electrical and optical properties of semi-insulating GaAs discusse...
Bulk semi-insulating GaAs grown by the liquid encapsulated Czochralski (LEC) method has been investi...
Bulk GaAs, a wide band gap semiconductor, shows potential as a room temperature radiation detector. ...
Detectors with a p-i-n structure based on Liquid Encapsulated Czochralski (LEC) grown Semi-Insulatin...
GaAs is a wide band gap semiconductor (1.42 eV) with potential use as a room temperature radiation d...
The gamma radiation defects were studied by the deep level transient spectroscopy (DLTS) and the con...
Research into new semiconductor materials for measurement of electromagnetic radiation over a wide r...
Radiation detectors work as Schottky devices. The Schottky contact of the investigated detectors con...
The performance of semi-insulating GaAs detectors, grown with the LEC technique, has been studied by...
In order to investigate the correlation between the electrical characteristics of the semi-insulatin...
A range of optical, electrical and radiation techniques were used to study the performance of GaAs a...
A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through t...
GaAs is a wide band gap (1.42 eV) semiconductor that has shown promise as a room temperature operate...
Vertical zone melt (VZM) bulk GaAs boules have been zone refined (ZR) and zone leveled (ZL) to reduc...
In this work, the different aspects of X-ray digital radiology are considered and the requirements o...
In this chapter, not only are the electrical and optical properties of semi-insulating GaAs discusse...
Bulk semi-insulating GaAs grown by the liquid encapsulated Czochralski (LEC) method has been investi...
Bulk GaAs, a wide band gap semiconductor, shows potential as a room temperature radiation detector. ...
Detectors with a p-i-n structure based on Liquid Encapsulated Czochralski (LEC) grown Semi-Insulatin...
GaAs is a wide band gap semiconductor (1.42 eV) with potential use as a room temperature radiation d...
The gamma radiation defects were studied by the deep level transient spectroscopy (DLTS) and the con...
Research into new semiconductor materials for measurement of electromagnetic radiation over a wide r...
Radiation detectors work as Schottky devices. The Schottky contact of the investigated detectors con...
The performance of semi-insulating GaAs detectors, grown with the LEC technique, has been studied by...
In order to investigate the correlation between the electrical characteristics of the semi-insulatin...
A range of optical, electrical and radiation techniques were used to study the performance of GaAs a...
A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through t...
GaAs is a wide band gap (1.42 eV) semiconductor that has shown promise as a room temperature operate...
Vertical zone melt (VZM) bulk GaAs boules have been zone refined (ZR) and zone leveled (ZL) to reduc...
In this work, the different aspects of X-ray digital radiology are considered and the requirements o...
In this chapter, not only are the electrical and optical properties of semi-insulating GaAs discusse...