Bulk GaAs room temperature radiation detectors

Bulk GaAs, a wide band gap semiconductor, shows potential as a room temperature radiation detector. Schottky diode detectors were fabricated from LEC bulk GaAs crystals. The basic construction of these diodes employed the use of a Ti/Au Schottky contact and a Au/Ge/Ni alloyed ohmic contact. Pulse height characteristics of these diodes indicate active regions of more than 100 [mu]m. Pulse height spectra were recorded from alpha particle irradiation of the Schottky contact surface resulting in a best energy resolution of 2.5% at 5.5 MeV. Low energy gamma rays measured under room temperature operating conditions resulted in photopeaks with 37% FWHM at 60 keV.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/29727/1/0000063.pd