We report on a Raman scattering study of the electric-field dependence of c0 --> c1 intersubband transitions of electrons in a 264 A GaAs- Al0.3Ga0.7As quantum-well structure. The measured Stark shifts are in very good agreement with theoretical predictions. The intensity of the intersubband peak increases rapidly with applied field due to parity-mixing. In contrast to the enhanced broadening shown by excitation resonances, the width of c0 --> c1 is nearly independent of the field. This feature is attributed to effects of structural disorder.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/26980/1/0000547.pd
We theoretically study the subband structure of single Si delta -doped GaAs inserted in a quantum we...
In this thesis the results are presented of a theoretical investigation into the effects of strain a...
This dissertation is a theoretical treatment of the electric field dependence of optical properties ...
Nous avons étudié l'effet d'un champ électrique sur la transition inter-sous-bande co→c1, dans un pu...
The results of modeling the application of an external electric field to disordered, strained InGaAs...
Room‐temperature electrotransmittance has been used in order to investigate the interband excitonic ...
Room‐temperature electrotransmittance has been used in order to investigate the interband excitonic ...
We report on a magneto-Raman scattering investigation of free and donor-bound electrons in GaAs---Al...
This thesis is a theoretical and experimental investigation of the intersubband transitions in quant...
[[abstract]]A 1.3 µm modulator using light-hole–to-electron interband Stark shift in the lattice-mat...
We theoretically study the subband structure of single Si delta -doped GaAs inserted in a quantum we...
In this thesis the results are presented of a theoretical investigation into the effects of strain a...
Photoluminescence linewidths and transition energies have been measured in GaAs‐AlGaAs multiple quan...
The effects of an applied bias in the longitudinal or growth direction on four In$\sb{\rm x}$Ga$\sb{...
We report on a magneto-Raman scattering investigation of free and donor-bound electrons in GaAs/AlxG...
We theoretically study the subband structure of single Si delta -doped GaAs inserted in a quantum we...
In this thesis the results are presented of a theoretical investigation into the effects of strain a...
This dissertation is a theoretical treatment of the electric field dependence of optical properties ...
Nous avons étudié l'effet d'un champ électrique sur la transition inter-sous-bande co→c1, dans un pu...
The results of modeling the application of an external electric field to disordered, strained InGaAs...
Room‐temperature electrotransmittance has been used in order to investigate the interband excitonic ...
Room‐temperature electrotransmittance has been used in order to investigate the interband excitonic ...
We report on a magneto-Raman scattering investigation of free and donor-bound electrons in GaAs---Al...
This thesis is a theoretical and experimental investigation of the intersubband transitions in quant...
[[abstract]]A 1.3 µm modulator using light-hole–to-electron interband Stark shift in the lattice-mat...
We theoretically study the subband structure of single Si delta -doped GaAs inserted in a quantum we...
In this thesis the results are presented of a theoretical investigation into the effects of strain a...
Photoluminescence linewidths and transition energies have been measured in GaAs‐AlGaAs multiple quan...
The effects of an applied bias in the longitudinal or growth direction on four In$\sb{\rm x}$Ga$\sb{...
We report on a magneto-Raman scattering investigation of free and donor-bound electrons in GaAs/AlxG...
We theoretically study the subband structure of single Si delta -doped GaAs inserted in a quantum we...
In this thesis the results are presented of a theoretical investigation into the effects of strain a...
This dissertation is a theoretical treatment of the electric field dependence of optical properties ...