Transient analysis of the TRAPATT mode in avalanche diodes

The start-up transient behavior of the TRAPATT mode of oscillation in both n+pp+ and p+nn+ Si avalanche diodes is studied by computer simulation in the time domain through a device-circuit interaction program. The start-up transient is investigated for various rise times of the applied bias pulse. The TRAPATT waveforms obtained from the simulation are in agreement with those observed experimentally. The theory of TRAPATT operation in a coaxial circuit is revised and its previous inconsistencies are resolved. The low-frequency bias-circuit oscillation is discussed and its relation to device instabilities and tuning-induced burnout are presented.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/22523/1/0000067.pd