Ion irradiation has been observed to induce a macroscopic flattening and in-plane shrinkage of graphene sheets without a complete loss of crystallinity. Electron diffraction studies performed during simultaneous in-situ ion irradiation have allowed identification of the fluence at which the graphene sheet loses long-range order. This approach has facilitated complementary ex-situ investigations, allowing the first atomic resolution scanning transmission electron microscopy images of ion-irradiation induced graphene defect structures together with quantitative analysis of defect densities using Raman spectroscopy
Roughness and defects induced on few-layer graphene (FLG) irradiated by Ar+ ions at different energi...
International audienceGraphite samples exposed to H, D and He plasma at fluencies from 10(16) to 10(...
Defects in graphene alter its electrical, chemical, magnetic and mechanical properties. The intentio...
In this work, the effect of the ion fluence-dependent defect formation on the modification of surfac...
The successful integration of graphene in future technologies, such as filtration and nanoelectronic...
The addition of structural defects modifies the intrinsic properties of graphene–the two dimensional...
CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm-2)...
Delicate ripples flow through the electrons in graphene after impact by an ion, reminiscent of the p...
Raman spectroscopy and Monte-Carlo simulation studies for supported graphene irradiated by 160 MeV X...
Raman spectroscopy and Monte-Carlo simulation studies for supported graphene irradiated by 160 MeV ...
Despite the frequent use of noble gas ion irradiation of graphene, the atomistic-scale details, incl...
International audienceGraphene is expected to be rather insensitive to ion irradiation. We demonstra...
We examine swift heavy ion-induced defect production in suspended single layer graphene using Raman ...
CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm 2)...
International audienceStrains strongly affect the properties of low-dimensional materials, such as g...
Roughness and defects induced on few-layer graphene (FLG) irradiated by Ar+ ions at different energi...
International audienceGraphite samples exposed to H, D and He plasma at fluencies from 10(16) to 10(...
Defects in graphene alter its electrical, chemical, magnetic and mechanical properties. The intentio...
In this work, the effect of the ion fluence-dependent defect formation on the modification of surfac...
The successful integration of graphene in future technologies, such as filtration and nanoelectronic...
The addition of structural defects modifies the intrinsic properties of graphene–the two dimensional...
CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm-2)...
Delicate ripples flow through the electrons in graphene after impact by an ion, reminiscent of the p...
Raman spectroscopy and Monte-Carlo simulation studies for supported graphene irradiated by 160 MeV X...
Raman spectroscopy and Monte-Carlo simulation studies for supported graphene irradiated by 160 MeV ...
Despite the frequent use of noble gas ion irradiation of graphene, the atomistic-scale details, incl...
International audienceGraphene is expected to be rather insensitive to ion irradiation. We demonstra...
We examine swift heavy ion-induced defect production in suspended single layer graphene using Raman ...
CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm 2)...
International audienceStrains strongly affect the properties of low-dimensional materials, such as g...
Roughness and defects induced on few-layer graphene (FLG) irradiated by Ar+ ions at different energi...
International audienceGraphite samples exposed to H, D and He plasma at fluencies from 10(16) to 10(...
Defects in graphene alter its electrical, chemical, magnetic and mechanical properties. The intentio...