Fabrication of SiC micro-electro-mechanical systems (MEMS) using one-step dry etching

A simple one-step inductively coupled plasma etching technique has been developed for the fabrication of SiC resonant beam structures. Straight cantilever and bridge devices have been made successfully. The structures have been actuated and resonant frequencies ranging from ~120 kHz to ~5 MHz have been measured. Comparison of the theoretically simulated and experimentally measured resonant frequencies shows the presence of significant tensile stress in bridge structures while the cantilever beams are free of stress. The degree of the tension in the bridge structures has been found to be independent of the bridge length