Add to ORKGWe have applied high resolution chemical imaging in a transmission electron microscope to study compositional variations across InGaAs/InAlAs double quantum well structures. The structures of interest are grown on an InP substrate and consist of two 40 angstroms layers of InGaAs separated by 20 angstroms of InAlAs. For this (InGa)x(InAl)1-xAs system, we have been able to obtain compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/2Ã?1/2 unit cell. The results clearly show irregularities on a monatomic scale
A proper design of the active layers and injector layers is a vital step in producing sophisticated ...
We report on the non-squared composition profiles of three series of thin (Lz[MATH]30Å) InGaAs/InP q...
Electron microscopy studies have previously revealed the presence of fine scale (10nm) variations of...
We have applied high-resolution chemical imaging in a transmission electron microscope to study comp...
During the production of InxGa1-xAs quantum wells by the crystal growth technique of molecular beam ...
The quaternary semiconductor InGaNAs is of technological interest for development of solar cells as ...
International audienceUsing elastic scattering theory we show that a small set of energy dispersive ...
An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by m...
High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion o...
We present a simple and robust method to acquire quantitative maps of compositional fluctuations in ...
High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion o...
International audienceThe electronic and structural properties of an In x Ga 1Àx As quantum well (QW...
Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess ...
International audienceTo unambiguously evaluate the indium and nitrogen concentrations in In x Ga 1 ...
We present a detailed examination of a multiple InxGa1−xN quantum well (QW) structure for optoelectr...
A proper design of the active layers and injector layers is a vital step in producing sophisticated ...
We report on the non-squared composition profiles of three series of thin (Lz[MATH]30Å) InGaAs/InP q...
Electron microscopy studies have previously revealed the presence of fine scale (10nm) variations of...
We have applied high-resolution chemical imaging in a transmission electron microscope to study comp...
During the production of InxGa1-xAs quantum wells by the crystal growth technique of molecular beam ...
The quaternary semiconductor InGaNAs is of technological interest for development of solar cells as ...
International audienceUsing elastic scattering theory we show that a small set of energy dispersive ...
An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by m...
High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion o...
We present a simple and robust method to acquire quantitative maps of compositional fluctuations in ...
High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion o...
International audienceThe electronic and structural properties of an In x Ga 1Àx As quantum well (QW...
Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess ...
International audienceTo unambiguously evaluate the indium and nitrogen concentrations in In x Ga 1 ...
We present a detailed examination of a multiple InxGa1−xN quantum well (QW) structure for optoelectr...
A proper design of the active layers and injector layers is a vital step in producing sophisticated ...
We report on the non-squared composition profiles of three series of thin (Lz[MATH]30Å) InGaAs/InP q...
Electron microscopy studies have previously revealed the presence of fine scale (10nm) variations of...
