Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 81, 2179 (1997) and may be found at
Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. ...
We report the diffusion and quantum well intermixing (QWI) effects of the neutral impurities fluorin...
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photolu...
Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. ...
Photoluminescence coupled with repetitive thermal annealing has been used to determine diffusion coe...
Photoluminescence coupled with repetitive thermal annealing has been used to determine diffusion coe...
Article copyright 2005 American Institute of Physics. This article may be downloaded for personal us...
Abstract: A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs...
Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. ...
Thesis (Ph. D.)--University of Rochester. College of Engineering and Applied Science. Institute of O...
Photoluminescence coupled with repetitive thermal annealing has been used to study the thermal inter...
Photoluminescence coupled with repetitive thermal annealing has been used to study the thermal inter...
This thesis presents the results of a study of the interdiffusion of InGaAs/GaAs structures. Photolu...
There have been several recent reports of barrier height studies on metal-semiconductor interfaces. ...
Impurity‐induced layer disordering of In0.53 Ga0.47 As/In0.52 Al0.48 As heterostructures grown by mo...
Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. ...
We report the diffusion and quantum well intermixing (QWI) effects of the neutral impurities fluorin...
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photolu...
Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. ...
Photoluminescence coupled with repetitive thermal annealing has been used to determine diffusion coe...
Photoluminescence coupled with repetitive thermal annealing has been used to determine diffusion coe...
Article copyright 2005 American Institute of Physics. This article may be downloaded for personal us...
Abstract: A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs...
Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. ...
Thesis (Ph. D.)--University of Rochester. College of Engineering and Applied Science. Institute of O...
Photoluminescence coupled with repetitive thermal annealing has been used to study the thermal inter...
Photoluminescence coupled with repetitive thermal annealing has been used to study the thermal inter...
This thesis presents the results of a study of the interdiffusion of InGaAs/GaAs structures. Photolu...
There have been several recent reports of barrier height studies on metal-semiconductor interfaces. ...
Impurity‐induced layer disordering of In0.53 Ga0.47 As/In0.52 Al0.48 As heterostructures grown by mo...
Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. ...
We report the diffusion and quantum well intermixing (QWI) effects of the neutral impurities fluorin...
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photolu...