We present our recent progress in the development of novel lasers with tapered InAs/GaAs quantum-dot devices at their core, unlocking the access to record-high output power from tunable and ultrafast laser diodes, in the spectral region between 1.2 - 1.3 μm.</p
Semiconductor lasers are convenient and compact sources of light, offering highly efficient operatio...
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor op...
A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning ...
We present our recent progress in the development of novel lasers with tapered InAs/GaAs quantum-dot...
Semiconductor quantum dots offer major advantages in ultrafast science and technology, due to the p...
In this paper we review the recent progress on the development of novel quantum-dot structures and l...
Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort...
We have produced GaAs-based quantum-dot edge-emitting lasers operating at 1.16 mum with record-low t...
Novel materials, notably quantum-dot (QD) semiconductor structures offer the unique possibility of c...
Solid-state lasers that can generate optical pulses in the picosecond and femtosecond domains have p...
We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic pas...
In recent years, quantum-dot (QD) mode-locked semiconductors lasers have shown great potential as ul...
This paper presents the current status of our research in mode-locked quantum-dot edge-emitting lase...
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor op...
This paper presents the current status of our research in mode-locked quantum-dot edge-emitting lase...
Semiconductor lasers are convenient and compact sources of light, offering highly efficient operatio...
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor op...
A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning ...
We present our recent progress in the development of novel lasers with tapered InAs/GaAs quantum-dot...
Semiconductor quantum dots offer major advantages in ultrafast science and technology, due to the p...
In this paper we review the recent progress on the development of novel quantum-dot structures and l...
Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort...
We have produced GaAs-based quantum-dot edge-emitting lasers operating at 1.16 mum with record-low t...
Novel materials, notably quantum-dot (QD) semiconductor structures offer the unique possibility of c...
Solid-state lasers that can generate optical pulses in the picosecond and femtosecond domains have p...
We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic pas...
In recent years, quantum-dot (QD) mode-locked semiconductors lasers have shown great potential as ul...
This paper presents the current status of our research in mode-locked quantum-dot edge-emitting lase...
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor op...
This paper presents the current status of our research in mode-locked quantum-dot edge-emitting lase...
Semiconductor lasers are convenient and compact sources of light, offering highly efficient operatio...
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor op...
A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning ...
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