Ion implantation of polythiophene

Polythiophene as a free-standing film has been ion implanted with F+-ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·1015…5 .1016 F+/cm2. The conductivity changes by 6 orders of magnitude being 1.10−2 Ω−crn−1 at a highest dose of 1·1017 F+/cm2. RBS spectra show that a 0.35...0.40 μm surface layer is damaged. The increasing conductivity is accompanied by a decrease in its activation energy and the optical energy gap at room temperature