The 5×5,6√3×6√3−R30° and graphene-covered 6√3×6√3−R30° reconstructions of the SiC(0001) surface are studied by scanning tunneling microscopy and spectroscopy. For the 5×5 structure a rich spectrum of surface states is obtained, with one state, in particular, found to be localized on top of structural protrusions (adatoms) observed on the surface. Similar spectra are observed on the bare 6√3×6√3−R30° reconstruction, and in both cases the spectra display nearly zero conductivity at the Fermi level. When graphene covers the 6√3×6√3−R30° surface the conductivity at the Fermi level shows a marked increase, and additionally the various surface state peaks seen in the spectrum shift in energy and fall in intensity. The influence of the overlying g...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
The formation of graphene on the SiC(000) surface (the C-face of the {0001} surfaces) has been studi...
International audienceWe present an investigation of the atomic and electronic structure of graphene...
International audienceWe present an investigation of the atomic and electronic structure of graphene...
24 pagesInternational audienceWe examine in detail the structure and the evolution upon annealing of...
4 pages, 3 figuresJournal-ref: Physical Review B 76, 041403(R) (2007)International audienceWe presen...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
International audienceThe atomic and electronic structures of a graphene layer on top of the (2 × 2)...
73.20.-r 68.55.-aInternational audienceThe early stages of the graphitization of the 6H-SiC(000N1) (...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
The formation of graphene on the SiC(000) surface (the C-face of the {0001} surfaces) has been studi...
International audienceWe present an investigation of the atomic and electronic structure of graphene...
International audienceWe present an investigation of the atomic and electronic structure of graphene...
24 pagesInternational audienceWe examine in detail the structure and the evolution upon annealing of...
4 pages, 3 figuresJournal-ref: Physical Review B 76, 041403(R) (2007)International audienceWe presen...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
International audienceThe early stage of graphene formation on the 6H-SiC 0001¯ surface is investiga...
International audienceThe atomic and electronic structures of a graphene layer on top of the (2 × 2)...
73.20.-r 68.55.-aInternational audienceThe early stages of the graphitization of the 6H-SiC(000N1) (...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. H...
The formation of graphene on the SiC(000) surface (the C-face of the {0001} surfaces) has been studi...