The response of a Peltier-cooled large-area avalanche photodiode to VUV-light is investigated as a function of the operation temperature. The reduction of the temperature down to 5°C will improve both photodiode light-level detection limit and statistical fluctuations; further temperature reduction will not result in improved performance. Optimum operation characteristics are already achieved for gains around 100 and do not depend significantly on the operation temperature. The relative variation of the gain with temperature increases with the biasing voltage presenting values that are almost a factor of two higher than for visible light detection.http://www.sciencedirect.com/science/article/B6TJM-48408MT-C/1/5c5bf530dbf3ad0f897e3e130793daf
Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrar...
An experimental apparatus for carrying out electrical noise measurements on various semiconductor de...
Since avalanche gain and breakdown voltage in most semiconductor materials change with temperature, ...
The response of a Peltier-cooled large-area avalanche photodiode to VUV-light is investigated as a f...
A Large Area Avalanche Photodiode was studied, aiming to access its performance as light detector at...
The excess noise factor (ENF) of a large area avalanche photodiode was measured as a function of gai...
It has been observed that the breakdown voltage of the avalanche photodiode (APD) changes with the c...
A n avalanche photodiode has been operated as a photon-counting detector with 2 to 3 times the sensi...
The present manuscript reviews our R+D studies on the application of large area avalanche photodiode...
An avalanche photodiode has been operated as a photon-counting detector with 2 to 3 times the sensit...
In the paper, the influence of temperature variation on the sensitivity of an avalanche-photodiode-b...
The behaviour of large-area avalanche photodiodes for X-rays, visible and vacuum-ultra-violet (VUV) ...
The double response of a large area avalanche photodiode, a planar RMD model S1315, to 6-keV x-rays ...
Avalanche photodiodes (APDs) are key optical receivers due to their performance advantages of high s...
The room-temperature response of large-area avalanche photodiodes (LAAPDs) to 128- and 172-nm light ...
Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrar...
An experimental apparatus for carrying out electrical noise measurements on various semiconductor de...
Since avalanche gain and breakdown voltage in most semiconductor materials change with temperature, ...
The response of a Peltier-cooled large-area avalanche photodiode to VUV-light is investigated as a f...
A Large Area Avalanche Photodiode was studied, aiming to access its performance as light detector at...
The excess noise factor (ENF) of a large area avalanche photodiode was measured as a function of gai...
It has been observed that the breakdown voltage of the avalanche photodiode (APD) changes with the c...
A n avalanche photodiode has been operated as a photon-counting detector with 2 to 3 times the sensi...
The present manuscript reviews our R+D studies on the application of large area avalanche photodiode...
An avalanche photodiode has been operated as a photon-counting detector with 2 to 3 times the sensit...
In the paper, the influence of temperature variation on the sensitivity of an avalanche-photodiode-b...
The behaviour of large-area avalanche photodiodes for X-rays, visible and vacuum-ultra-violet (VUV) ...
The double response of a large area avalanche photodiode, a planar RMD model S1315, to 6-keV x-rays ...
Avalanche photodiodes (APDs) are key optical receivers due to their performance advantages of high s...
The room-temperature response of large-area avalanche photodiodes (LAAPDs) to 128- and 172-nm light ...
Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrar...
An experimental apparatus for carrying out electrical noise measurements on various semiconductor de...
Since avalanche gain and breakdown voltage in most semiconductor materials change with temperature, ...