Life time prediction and thermal management are among the key issues regarding the performance of today\u27s semiconductor devices. And a fast and accurate thermal model can be used to tackle those problems more efficiently. In this paper, different thermal models of an IGBT power module have been established and compared. Firstly, a 3D finite element method (FEM) model is simulated in COMSOL. And then, a lumped parameter thermal model with considering different aspects (heat spreading and thermal coupling) is derived. The simulation indicates that the proposed model can achieve a relatively accurate result within a short simulation time
Accurately predicting the temperature of semiconductor devices is very important in the initial desi...
In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temper...
An accurate and real-time knowledge of temperatures in insulated-gate bipolar transistormodules is c...
Detailed thermal dynamics of high-power IGBT modules are important information for the reliability a...
Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is...
The conventional RC lumped thermal networks are widely used to estimate the temperature of power dev...
Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conduct...
Thermal loading of Insulated Gate Bipolar Transistor (IGBT) modules is important for the reliability...
Thermal management of high power IGBT (Insulated Gate Bipolar Transistor) modules is crucial to ensu...
Thermal management of power electronic devices is essential for reliable performance especially at h...
Estimation of accurate IGBT junction temperature is crucial for reliability assessment. The well-kno...
As the power density and switching frequency increase, thermal analysis of power electronics system ...
A novel Insulated Gate Bipolar Transistor (IGBT) electro-thermal modeling approach involving PSpice ...
In a compact power electronics systems such as converters, thermal interaction between components is...
Accurately predicting the temperature of semiconductor devices is very important in the initial desi...
Accurately predicting the temperature of semiconductor devices is very important in the initial desi...
In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temper...
An accurate and real-time knowledge of temperatures in insulated-gate bipolar transistormodules is c...
Detailed thermal dynamics of high-power IGBT modules are important information for the reliability a...
Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is...
The conventional RC lumped thermal networks are widely used to estimate the temperature of power dev...
Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conduct...
Thermal loading of Insulated Gate Bipolar Transistor (IGBT) modules is important for the reliability...
Thermal management of high power IGBT (Insulated Gate Bipolar Transistor) modules is crucial to ensu...
Thermal management of power electronic devices is essential for reliable performance especially at h...
Estimation of accurate IGBT junction temperature is crucial for reliability assessment. The well-kno...
As the power density and switching frequency increase, thermal analysis of power electronics system ...
A novel Insulated Gate Bipolar Transistor (IGBT) electro-thermal modeling approach involving PSpice ...
In a compact power electronics systems such as converters, thermal interaction between components is...
Accurately predicting the temperature of semiconductor devices is very important in the initial desi...
Accurately predicting the temperature of semiconductor devices is very important in the initial desi...
In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temper...
An accurate and real-time knowledge of temperatures in insulated-gate bipolar transistormodules is c...