Photoluminescence (PL) study is conducted on InAs films molecular beam epitaxially grown on GaAs substrates with different Bi flux levels. A PL peak blueshift accompanied by linewidth broadening is found with the increase of Bi/As flux ratio, in contrast to the common Bi isoelectronic incorporation or surfactant effect. It is, with detailed lineshape analysis and the evidence of PL peak splitting in a magnetic filed, attributed to the electron concentration enhancement induced by Bi flux. The electron concentration in InAs film is evaluated, which is about 5-fold enhanced as Bi/As flux ratio rises up from 0 to 1x10(-3). The temperature dependence of the PL spectrum indicates that the carrier redistribution augments while the carrier-phonon ...
GaAsBi light emitting diodes containing ∼6% Bi are grown on GaAs substrates. Good room-temperature e...
We have investigated the temperature dependence of photoluminescence (PL) properties of a number of ...
We report the compositional dependence of the exciton reduced mass, mu(exc), of GaAs1-xBix in a very...
\ua9 2015 Elsevier B.V. All rights reserved. InAs films were grown on GaAs substrates by molecular b...
We study the tsurface morphology and photoluminescence (PL) property of InAs quantum dots (QDs) on G...
This work reports on an experimental investigation of the influence of vertical stacking of quantum ...
Band-tail states in semiconductors reflect the effects of material growth and/or treatment, affect t...
Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecu...
Indium arsenide quantum dots are of great interest for next-generation telecom optoelectronics if th...
We report systematic study of growth of self-assembled InAs quantum dots (QDs) on GaAs substrate at ...
International audienceBulk GaAs1 - xBi x /GaAs alloys with various bismuth compositions are studied ...
A set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML i...
We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular bea...
We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular bea...
International audienceThe growth of Bi on both the In-terminated (A) face and the As-terminated (B) ...
GaAsBi light emitting diodes containing ∼6% Bi are grown on GaAs substrates. Good room-temperature e...
We have investigated the temperature dependence of photoluminescence (PL) properties of a number of ...
We report the compositional dependence of the exciton reduced mass, mu(exc), of GaAs1-xBix in a very...
\ua9 2015 Elsevier B.V. All rights reserved. InAs films were grown on GaAs substrates by molecular b...
We study the tsurface morphology and photoluminescence (PL) property of InAs quantum dots (QDs) on G...
This work reports on an experimental investigation of the influence of vertical stacking of quantum ...
Band-tail states in semiconductors reflect the effects of material growth and/or treatment, affect t...
Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecu...
Indium arsenide quantum dots are of great interest for next-generation telecom optoelectronics if th...
We report systematic study of growth of self-assembled InAs quantum dots (QDs) on GaAs substrate at ...
International audienceBulk GaAs1 - xBi x /GaAs alloys with various bismuth compositions are studied ...
A set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML i...
We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular bea...
We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular bea...
International audienceThe growth of Bi on both the In-terminated (A) face and the As-terminated (B) ...
GaAsBi light emitting diodes containing ∼6% Bi are grown on GaAs substrates. Good room-temperature e...
We have investigated the temperature dependence of photoluminescence (PL) properties of a number of ...
We report the compositional dependence of the exciton reduced mass, mu(exc), of GaAs1-xBix in a very...