Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
- Ball, D.R.
- Galloway, K.F.
- Johnson, R.A.
- Alles, M.L.
- Sternberg, A.L.
- Sierawski, B.D.
- Witulski, A.F.
- Reed, R.A.
- Schrimpf, R.D.
- Hutson, J.M.
- Javanainen, A.
- Lauenstein, J-M.
Publication date
January 2020
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes.peerReviewe
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