We propose a general methodology to calculate the individual sensitivity and the cross-sensitivities of potentiometric sensor devices (e.g., ion sensitive FETs (ISFETs), CHEMFETs) with an arbitrary number of non-interacting receptors binding to ionic species or analytes in the electrolyte. The surface charge generated at the (bare or functionalized) interface with the electrolyte is described by the Poisson equation coupled to a linear system of equations for each type of receptor, where the unknowns are the fractions of sites binding with a given ion/analyte. Our general model encompasses in a unique framework a few simple special cases so far separately reported in the literature and provides for them closed-form expressions of the averag...
In this work, we developed a unique computational approach that allowed us to detect immobilized amp...
© 2015 Elsevier B.V. All rights reserved.Ion-sensitive field-effect transistors based on silicon nan...
The pH sensitivity of ISFETs arises from interactions of protons with ISFET gate surface sites. This...
We propose a general methodology to calculate the individual sensitivity and the cross-sensitivities...
We propose a general methodology to calculate the individual sensitivity and the cross-sensitivities...
The use of Field Effect Transistors as electrochemical sensor combined with integrated readouts in ...
The use of Field Effect Transistors as electrochemical sensor combined with integrated readouts in ...
We present a model of arbitrary chemical reactions at the interface between a solid and an electrol...
We present a model of arbitrary chemical reactions at the interface between a solid and an electrol...
We present a model of arbitrary chemical reactions at the interface between a solid and an electroly...
In this work, we exploit the general-purpose solver COMSOL, equipped with electrolyte and semiconduc...
In this work, we exploit the general-purpose solver COMSOL, equipped with electrolyte and semiconduc...
In this work, we exploit the general-purpose solver COMSOL, equipped with electrolyte and semiconduc...
We propose a new approach to describe in commercial TCAD the chemical reactions that occur at dielec...
Field-Effect Transistor-sensors (FET-sensors) are a class of pH and biomolecule sensors that can be ...
In this work, we developed a unique computational approach that allowed us to detect immobilized amp...
© 2015 Elsevier B.V. All rights reserved.Ion-sensitive field-effect transistors based on silicon nan...
The pH sensitivity of ISFETs arises from interactions of protons with ISFET gate surface sites. This...
We propose a general methodology to calculate the individual sensitivity and the cross-sensitivities...
We propose a general methodology to calculate the individual sensitivity and the cross-sensitivities...
The use of Field Effect Transistors as electrochemical sensor combined with integrated readouts in ...
The use of Field Effect Transistors as electrochemical sensor combined with integrated readouts in ...
We present a model of arbitrary chemical reactions at the interface between a solid and an electrol...
We present a model of arbitrary chemical reactions at the interface between a solid and an electrol...
We present a model of arbitrary chemical reactions at the interface between a solid and an electroly...
In this work, we exploit the general-purpose solver COMSOL, equipped with electrolyte and semiconduc...
In this work, we exploit the general-purpose solver COMSOL, equipped with electrolyte and semiconduc...
In this work, we exploit the general-purpose solver COMSOL, equipped with electrolyte and semiconduc...
We propose a new approach to describe in commercial TCAD the chemical reactions that occur at dielec...
Field-Effect Transistor-sensors (FET-sensors) are a class of pH and biomolecule sensors that can be ...
In this work, we developed a unique computational approach that allowed us to detect immobilized amp...
© 2015 Elsevier B.V. All rights reserved.Ion-sensitive field-effect transistors based on silicon nan...
The pH sensitivity of ISFETs arises from interactions of protons with ISFET gate surface sites. This...