CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking

This work is concerned with the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for a possible future upgrade of the SuperB-Layer0, is provided through a complete characterization of the prototypes, including tests with infrared (IR) laser, 55 Fe and 90 Sr sources. The radiation hardness study of the technology will also be presented together with its impact on 3D DNW MAPS performance