Resonant tunneling injection is a key ingredient in achieving population inversion in a putative quantum dot cascade laser. In a quantum dot based structure, such resonant current requires a matching of the wavefunction shape in k-space between the injector and the quantum dot. We show experimentally that the injection into an excited state of a dash structure can be enhanced tenfold by an in-plane magnetic field that shifts the injector distribution in k-space. These experiments, performed on resonant tunneling diode structures, show unambiguously resonant tunneling into an ensemble of InAs dashes grown between two AlInAs barrier layers. They also show that interface roughness scattering can enhance the tunneling current.ISSN:1367-263
Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling ...
This thesis describes an experimental investigation of the resonant injection of carriers into self-...
The effect of InAs quantum dots (QDs) grown in the center of a GaAs quantum well on the tunneling ch...
InAs quantum dots formed by submonolayer insertion of InAs into the GaAs quantum well of a GaAs/AlAs...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
The ballistic transport in the semiconductor, planar, circular quantum dot structures is studied the...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
This thesis describes an experimental study of the electronic properties of semiconductor heterostru...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We consider in this work many-body enhanced electron tunneling through an InAs quantum dot in a magn...
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunn...
Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a Ga...
We consider electron tunneling spectroscopy through an InAs quantum dot in a magnetic field applied ...
Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling ...
This thesis describes an experimental investigation of the resonant injection of carriers into self-...
The effect of InAs quantum dots (QDs) grown in the center of a GaAs quantum well on the tunneling ch...
InAs quantum dots formed by submonolayer insertion of InAs into the GaAs quantum well of a GaAs/AlAs...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
The ballistic transport in the semiconductor, planar, circular quantum dot structures is studied the...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
This thesis describes an experimental study of the electronic properties of semiconductor heterostru...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We consider in this work many-body enhanced electron tunneling through an InAs quantum dot in a magn...
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunn...
Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a Ga...
We consider electron tunneling spectroscopy through an InAs quantum dot in a magnetic field applied ...
Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling ...
This thesis describes an experimental investigation of the resonant injection of carriers into self-...
The effect of InAs quantum dots (QDs) grown in the center of a GaAs quantum well on the tunneling ch...