In this work the calibration of the directional Raman strain shift coefficient for tensile strained Ge microstructures is reported. The strain shift coefficient is retrieved from micro-Raman spectroscopy measurements in combination with absolute strain measurements from x-ray diffraction using focused synchrotron radiation. The results are used to fit the phonon deformation potentials. A linear dependence of the phonon deformation potentials p and q is revealed. The method can be extended to provide strain calibration of Raman experiments also in other material system.ISSN:0957-0233ISSN:1361-650
By performing density functional theory-based ab initio calculations, Raman-active phonon modes of s...
International audienceSummary form only given. Applying a large tensile strain of several percent in...
We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germ...
In this work the calibration of the directional Raman strain shift coefficient for tensile strained ...
International audienceGe under high strain is predicted to become a direct bandgap semiconductor. Ve...
The application of strain into GeSn alloys can effectively modulate the band structures, thus creati...
10.1143/JJAP.44.7922Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and ...
The influence of the thermomechanical effects on the optical properties of germanium microstructures...
The strain-shift coefficient used to convert Raman shifts to strain depends on multiple factors incl...
The concept of the phonon-mode Grüneisen tensor is reviewed as method to determine the elastic strai...
The influence of the thermomechanical effects on the optical properties of germanium microstructures...
The recently developed precession electron diffraction (PED) technique in scanning transmission elec...
International audienceLaue micro-diffraction and simultaneous rainbow-filtered micro-diffraction wer...
The recently developed precession electron diffraction (PED) technique in scanning transmission elec...
By performing density functional theory-based ab initio calculations, Raman-active phonon modes of s...
International audienceSummary form only given. Applying a large tensile strain of several percent in...
We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germ...
In this work the calibration of the directional Raman strain shift coefficient for tensile strained ...
International audienceGe under high strain is predicted to become a direct bandgap semiconductor. Ve...
The application of strain into GeSn alloys can effectively modulate the band structures, thus creati...
10.1143/JJAP.44.7922Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and ...
The influence of the thermomechanical effects on the optical properties of germanium microstructures...
The strain-shift coefficient used to convert Raman shifts to strain depends on multiple factors incl...
The concept of the phonon-mode Grüneisen tensor is reviewed as method to determine the elastic strai...
The influence of the thermomechanical effects on the optical properties of germanium microstructures...
The recently developed precession electron diffraction (PED) technique in scanning transmission elec...
International audienceLaue micro-diffraction and simultaneous rainbow-filtered micro-diffraction wer...
The recently developed precession electron diffraction (PED) technique in scanning transmission elec...
By performing density functional theory-based ab initio calculations, Raman-active phonon modes of s...
International audienceSummary form only given. Applying a large tensile strain of several percent in...
We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germ...