Coherent pseudomorphic structures that alternate nano-layers of contrasting strains have higher strength. Their long term stability to thermal diffusion would be at the heart of a new design concept for structural materials destined to very high temperature applications. The project aimed at exploring the prospect of inhibiting diffusion between compositionally dissimilar coherent layers by using the properties of a miscibility gap. Model crystalline heterostructures of the technologically important InGaAsP semiconductor system were grown by epitaxy. Thermal interdiffusion in lattice matched InGaAs/InP Quantum Wells (QW) and the miscibility gap properties of the InGaAsP system were characterised by newly associating Photoluminescence (PL) s...
A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/GaAs quant...
Abstract: A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs...
[[abstract]]We present the investigations of interdiffusion in InGaAsP multiple-quantum-well (MQW) s...
Coherent pseudomorphic structures that alternate nano-layers of contrasting strains have superior st...
Coherent pseudomorphic structures that alternate nano-layers of contrasting strains have higher stre...
Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. ...
Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only...
Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only...
Article copyright 2005 American Institute of Physics. This article may be downloaded for personal us...
This thesis presents the results of a study of the thermal stability of InGaAs and InGaAsP material ...
This thesis presents the results of a study of the thermal stability of InGaAs and InGaAsP material ...
Using the fundamental transition state, we will investigate the two phase interdiffusion of group V ...
The interdiffusion rate of group-V and group-III sublattice atoms in InxGa1-xAs/InP quantum well str...
Following a study of implantation enhanced interdiffusion of InGaAs/InP multiple quantum well (MQW) ...
A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/GaAs quant...
A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/GaAs quant...
Abstract: A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs...
[[abstract]]We present the investigations of interdiffusion in InGaAsP multiple-quantum-well (MQW) s...
Coherent pseudomorphic structures that alternate nano-layers of contrasting strains have superior st...
Coherent pseudomorphic structures that alternate nano-layers of contrasting strains have higher stre...
Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. ...
Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only...
Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only...
Article copyright 2005 American Institute of Physics. This article may be downloaded for personal us...
This thesis presents the results of a study of the thermal stability of InGaAs and InGaAsP material ...
This thesis presents the results of a study of the thermal stability of InGaAs and InGaAsP material ...
Using the fundamental transition state, we will investigate the two phase interdiffusion of group V ...
The interdiffusion rate of group-V and group-III sublattice atoms in InxGa1-xAs/InP quantum well str...
Following a study of implantation enhanced interdiffusion of InGaAs/InP multiple quantum well (MQW) ...
A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/GaAs quant...
A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/GaAs quant...
Abstract: A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs...
[[abstract]]We present the investigations of interdiffusion in InGaAsP multiple-quantum-well (MQW) s...