Modern computers usually contain several kinds of data storage devices. Very frequently magnetic and optical storage media are being used. The latter have become of great interest especially throughout the last decade: nowadays a significant amount of data is being stored on compact discs (CDs) and digital versatile discs (DVDs). Recently rewritable CDs have become commercially available. Their data storage layer usually consists of a thin film of a glass forming chalcogenide alloy (generally a Te alloy), which can be switched by laser heating locally and reversibly from the amorphous to the crystalline state. Rewritable DVDs and random access memories (RAMs) based on Te alloys are currently being developed. Therefore, it is important to en...
Photocrystallization, amorphization and conditions for optical information recording on amorphous la...
The amorphization and crystallization process of Ge$_{2}$Sb$_{2}$Te$_{5}$ is characterized. This all...
The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous...
Modern computers usually employ several types of data storage devices. Most frequently, magnetic and...
A combinatorial synthetic methodology based on evaporation sources in ultra-high vacuum has been use...
The rapidly increasing net amount of digital information requires higher data- storage capacities an...
Phase change media are tellurium based covalently bonded alloys which exist in a meta-stable amorpho...
Data can be stored in the form of amorphous and crystalline marks within a chalcogenide thin film. C...
Symposium DD on Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale De...
This article addresses the crystallization of amorphous Sb3.6Te films (40 nm thick) and 5 at. % Ge c...
Both Ag- and In-doped Sb2Te (AIST) and phase change materials located along the GeTe-Sb2Te3 pseudo-b...
Chalcogenide alloys are attracting considerable interest as phase-change materials. Their elastic pr...
The recent application of thin chalcogenide films is in optical data recording. The important point ...
Nowadays, the Ge-Sb-Te system is studied extensively for use in the field of both electrical and opt...
Ge2Sb2Te5 (GST) films, one of the most suitable Chalcogenide alloys for Phase change Random Access M...
Photocrystallization, amorphization and conditions for optical information recording on amorphous la...
The amorphization and crystallization process of Ge$_{2}$Sb$_{2}$Te$_{5}$ is characterized. This all...
The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous...
Modern computers usually employ several types of data storage devices. Most frequently, magnetic and...
A combinatorial synthetic methodology based on evaporation sources in ultra-high vacuum has been use...
The rapidly increasing net amount of digital information requires higher data- storage capacities an...
Phase change media are tellurium based covalently bonded alloys which exist in a meta-stable amorpho...
Data can be stored in the form of amorphous and crystalline marks within a chalcogenide thin film. C...
Symposium DD on Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale De...
This article addresses the crystallization of amorphous Sb3.6Te films (40 nm thick) and 5 at. % Ge c...
Both Ag- and In-doped Sb2Te (AIST) and phase change materials located along the GeTe-Sb2Te3 pseudo-b...
Chalcogenide alloys are attracting considerable interest as phase-change materials. Their elastic pr...
The recent application of thin chalcogenide films is in optical data recording. The important point ...
Nowadays, the Ge-Sb-Te system is studied extensively for use in the field of both electrical and opt...
Ge2Sb2Te5 (GST) films, one of the most suitable Chalcogenide alloys for Phase change Random Access M...
Photocrystallization, amorphization and conditions for optical information recording on amorphous la...
The amorphization and crystallization process of Ge$_{2}$Sb$_{2}$Te$_{5}$ is characterized. This all...
The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous...