Silicon, being one of the most abundant elements in nature, attracts wide-ranging scientific and technological interest. Specifically, in its elemental form, crystals of remarkable purity can be produced. One may assume that this would lead to silicon being well understood, and indeed, this is the case for many ambient properties, as well as for higher-pressure behaviour under quasi-static loading. However, despite many decades of study, a detailed understanding of the response of silicon to rapid compression—such as that experienced under shock impact—remains elusive. Here, we combine a novel free-electron laser-based X-ray diffraction geometry with laser-driven compression to elucidate the importance of shear generated during shock compre...
Recent experiments employing nanosecond white-light X-ray diffraction have demonstrated a complex re...
Silicon is one of the most important semiconductors in today‘s high-performance electronics. During ...
Laser-based shock experiments have been conducted in thin Si and Cu crystals at pressures above the ...
Silicon, being one of the most abundant elements in nature, attracts wide-ranging scientific and tec...
Silicon, being one of the most abundant elements in nature, attracts wide-ranging scientific and tec...
Silicon (Si) is one of the most abundant elements on Earth, and it is the most widely used semicondu...
The response of silicon to shock-compression has been an area of active research for decades. Howeve...
The elastic and inelastic response of [001] oriented silicon to laser compression has been a topic o...
The elastic and inelastic response of [001] oriented silicon to laser compression has been a topic o...
Silicon (Si) is one of the most abundant elements on Earth, and it is the most important and widely ...
Silicon is ubiquitous in our advanced technological society, yet our current understanding of change...
Under rapid high-temperature, high-pressure loading, lattices exhibit complex elastic-inelastic resp...
We demonstrate an ultrafast (<0.1 ps) reversible phase transition in silicon (Si) under ultrafast pr...
Here we report that high-power, pulsed, laser-driven shock compression of monocrystalline silicon pr...
An understanding of the fundamental mechanism behind the relief of shear stress in single-crystal si...
Recent experiments employing nanosecond white-light X-ray diffraction have demonstrated a complex re...
Silicon is one of the most important semiconductors in today‘s high-performance electronics. During ...
Laser-based shock experiments have been conducted in thin Si and Cu crystals at pressures above the ...
Silicon, being one of the most abundant elements in nature, attracts wide-ranging scientific and tec...
Silicon, being one of the most abundant elements in nature, attracts wide-ranging scientific and tec...
Silicon (Si) is one of the most abundant elements on Earth, and it is the most widely used semicondu...
The response of silicon to shock-compression has been an area of active research for decades. Howeve...
The elastic and inelastic response of [001] oriented silicon to laser compression has been a topic o...
The elastic and inelastic response of [001] oriented silicon to laser compression has been a topic o...
Silicon (Si) is one of the most abundant elements on Earth, and it is the most important and widely ...
Silicon is ubiquitous in our advanced technological society, yet our current understanding of change...
Under rapid high-temperature, high-pressure loading, lattices exhibit complex elastic-inelastic resp...
We demonstrate an ultrafast (<0.1 ps) reversible phase transition in silicon (Si) under ultrafast pr...
Here we report that high-power, pulsed, laser-driven shock compression of monocrystalline silicon pr...
An understanding of the fundamental mechanism behind the relief of shear stress in single-crystal si...
Recent experiments employing nanosecond white-light X-ray diffraction have demonstrated a complex re...
Silicon is one of the most important semiconductors in today‘s high-performance electronics. During ...
Laser-based shock experiments have been conducted in thin Si and Cu crystals at pressures above the ...