Add to ORKGSelected results from a TEM study of copper precipitation at extended surface defects in silicon are reported. The relative getting effectiveness of surface pits, oxidation induced stacking faults, and their bounding partials is compared. Copper-silicide precipitate colonies on {111} planes are observed for the first time and are found to nucleate at the bounding partials of oxidation induced stacking faults
In silicon-based devices copper (Cu) contamination is the cause of a variety of adverse effects, one...
The material quality of multicrystalline silicon is influenced by crystal defects and contaminations...
Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous si...
Results are presented from an investigation concerning the influence of oxidation-induced stacking f...
The gettering of Fe to extended surface defect sites, namely surface pits and oxidation induced stac...
La précipitation aux joints de grains de particules riches en Cuivre a été étudiée par MET dans du S...
The precipitation behavior of copper in silicon single crystals containing different amounts of oxyg...
Segregation of transition metal impurities to surfaces or interfaces can have detrimental or benefic...
One of the reasons why the principal gettering mechanism of copper at oxide precipitates is not yet ...
One of the reasons why the principal gettering mechanism of copper at oxide precipitates is not yet ...
La précipitation du cuivre a été étudiée par microscopie électronique par transmission dans un bicri...
The behavior of copper in the presence of a proximity gettering mechanism and a standard internal ge...
The impact of self-interstitials and strain on the critical size for nucleation of incoherent precip...
The ability of high temperature oxygen precipitate to act as a gettering sink for copper impurities ...
The presence of copper contamination is known to severely degrade the minority carrier lifetime of p...
In silicon-based devices copper (Cu) contamination is the cause of a variety of adverse effects, one...
The material quality of multicrystalline silicon is influenced by crystal defects and contaminations...
Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous si...
Results are presented from an investigation concerning the influence of oxidation-induced stacking f...
The gettering of Fe to extended surface defect sites, namely surface pits and oxidation induced stac...
La précipitation aux joints de grains de particules riches en Cuivre a été étudiée par MET dans du S...
The precipitation behavior of copper in silicon single crystals containing different amounts of oxyg...
Segregation of transition metal impurities to surfaces or interfaces can have detrimental or benefic...
One of the reasons why the principal gettering mechanism of copper at oxide precipitates is not yet ...
One of the reasons why the principal gettering mechanism of copper at oxide precipitates is not yet ...
La précipitation du cuivre a été étudiée par microscopie électronique par transmission dans un bicri...
The behavior of copper in the presence of a proximity gettering mechanism and a standard internal ge...
The impact of self-interstitials and strain on the critical size for nucleation of incoherent precip...
The ability of high temperature oxygen precipitate to act as a gettering sink for copper impurities ...
The presence of copper contamination is known to severely degrade the minority carrier lifetime of p...
In silicon-based devices copper (Cu) contamination is the cause of a variety of adverse effects, one...
The material quality of multicrystalline silicon is influenced by crystal defects and contaminations...
Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous si...