Add to ORKGWe present images of (110) cleavage surfaces of GaAs-AlxGa1-xAs superlattices obtained by scanning force microscopy (SFM) and field-emission scanning electron microscopy. Topographical information is mapped by secondary electrons (SEs) and SFM, compositional differences are imaged through SEs and backscattered electrons (BSEs), and information on dopant type is gained through SEs only. Models are presented explaining the contrast observed in each case
The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopan...
High resolution electron microscopy can within certain limits provide quantitative information on mo...
A detailed description of a combined reciprocal and real space technique for the mapping of layer co...
Field-emission scanning electron microscopy (FE-SEM) has been used to study several semiconductor mu...
Abstract—GaAs–AlAs superlattices with periodicities of up to 200 nm were cleaved to expose (110) fac...
EnIn this work we report the experimental results on AFM analysis of cleavages of multilayer GaAs...
Bias-voltage dependent STM-images of an n-type GaAs/AlGaAs superlattice are presented. It is observe...
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayer...
[[abstract]]We report direct observation of individual dopant impurities (Si-Ga in GaAs, S-As in InA...
Theoretical scanning tunneling microscopy (STM) images for all group-III and -V dopants on the GaAs ...
We have examined passivated and unpassivated GaAs (110) surfaces under ambient conditions with Scann...
The cross-section of Ga(Al,In)As/GaAs heterostructures has been investigated by selective wet etchin...
The morphology and chemistry of S-treated GaAs(001) surfaces have been investigated by using an atom...
Epitaxial layers grown by molecular beam epitaxy on both silicon and gallium arsenide substrates are...
Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast ...
The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopan...
High resolution electron microscopy can within certain limits provide quantitative information on mo...
A detailed description of a combined reciprocal and real space technique for the mapping of layer co...
Field-emission scanning electron microscopy (FE-SEM) has been used to study several semiconductor mu...
Abstract—GaAs–AlAs superlattices with periodicities of up to 200 nm were cleaved to expose (110) fac...
EnIn this work we report the experimental results on AFM analysis of cleavages of multilayer GaAs...
Bias-voltage dependent STM-images of an n-type GaAs/AlGaAs superlattice are presented. It is observe...
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayer...
[[abstract]]We report direct observation of individual dopant impurities (Si-Ga in GaAs, S-As in InA...
Theoretical scanning tunneling microscopy (STM) images for all group-III and -V dopants on the GaAs ...
We have examined passivated and unpassivated GaAs (110) surfaces under ambient conditions with Scann...
The cross-section of Ga(Al,In)As/GaAs heterostructures has been investigated by selective wet etchin...
The morphology and chemistry of S-treated GaAs(001) surfaces have been investigated by using an atom...
Epitaxial layers grown by molecular beam epitaxy on both silicon and gallium arsenide substrates are...
Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast ...
The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopan...
High resolution electron microscopy can within certain limits provide quantitative information on mo...
A detailed description of a combined reciprocal and real space technique for the mapping of layer co...