Compound semiconductor nanowires for optoelectronic device applications
- Gao, Q
- Joyce, H
- Paiman, S
- Kang, JH
- Tan, HH
- Jagadish, C
- Jackson, HE
- Smith, LM
- Yarrison-Rice, JM
- Zou, J
Publication date
January 2011
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, carrier lifetime and strain effects on the bandgap energy. © 2011 IEEE
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