Add to ORKGUltrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused ion beam are also characterized. This provides novel insight into the topographic and mechanical consequences of ion implantation for doses down to 10(14) ions/cm(2). The experimental results for both SiGe films and ion milled Si wafers are supported by simulations of the UFM technique
A force-sensor technique was developed to determine small forces in-situ in a scanning electron micr...
In this paper we address critical issues concerning calibration of AFM based methods used for nanosc...
A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image t...
The structure of nanometer-sized strained Ce islands epitaxially grown on a Si substrate was studied...
Imaging of nanoscale structures buried in a covering material is an extremely challenging task, but ...
The increasing production of nano-devices and nano-composite materials has prompted the development ...
Ultrasonic force microscopy (UFM) was introduced to probe nanoscale mechanical properties of stiff m...
Ultrasonic force microscopy (UFM) is an atomic force microscopy (AFM)-related technique originally i...
We present measurements using ultrasonic force microscopy at similar to 60 MHz, operating in a "wave...
This chapter describes an approach that depends on the nonlinear nature of the interaction between t...
The science and technology of thin films require the development of nondestructive methods for their...
Recent advances in mechanical diode-based ultrasonic force microscopy techniques are reviewed. The p...
In order to fabricate and characterise nanometer structures, silicon wafers were implanted with mask...
Nanoscale silicon beams (similar to3 mum long, 250 nm wide, and 193 nm thick) were implanted with Si...
Mechanical properties at nanoscale are crucial fators in the applications such as nanoscale intercon...
A force-sensor technique was developed to determine small forces in-situ in a scanning electron micr...
In this paper we address critical issues concerning calibration of AFM based methods used for nanosc...
A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image t...
The structure of nanometer-sized strained Ce islands epitaxially grown on a Si substrate was studied...
Imaging of nanoscale structures buried in a covering material is an extremely challenging task, but ...
The increasing production of nano-devices and nano-composite materials has prompted the development ...
Ultrasonic force microscopy (UFM) was introduced to probe nanoscale mechanical properties of stiff m...
Ultrasonic force microscopy (UFM) is an atomic force microscopy (AFM)-related technique originally i...
We present measurements using ultrasonic force microscopy at similar to 60 MHz, operating in a "wave...
This chapter describes an approach that depends on the nonlinear nature of the interaction between t...
The science and technology of thin films require the development of nondestructive methods for their...
Recent advances in mechanical diode-based ultrasonic force microscopy techniques are reviewed. The p...
In order to fabricate and characterise nanometer structures, silicon wafers were implanted with mask...
Nanoscale silicon beams (similar to3 mum long, 250 nm wide, and 193 nm thick) were implanted with Si...
Mechanical properties at nanoscale are crucial fators in the applications such as nanoscale intercon...
A force-sensor technique was developed to determine small forces in-situ in a scanning electron micr...
In this paper we address critical issues concerning calibration of AFM based methods used for nanosc...
A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image t...