Add to ORKGAlloying has been identified as an important mode of strain relief in quantum dot (QD) systems. We have performed both finite element analysis and atomistic simulations to understand the impact of alloying on the formation and shape change of GeSi QDs. A non-uniform composition profile of the alloy in the QD has also been predicted from Monte-Carlo simulations
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmi...
The formation of core/shell structures has become an established approach to passivate the surface a...
A novel peak finding method to map the strain from high resolution transmission electron micrographs...
The composition profile of a pyramid-shaped Ge(Si)/Si(001) quantum dot has been calculated using a c...
In this study, the significant effect of the nonuniform composition in alloy quantum dots (QDs) on e...
We present first a compatibility equation for the misfit strains induced in alloyed quantum dots (QD...
A number of methods for investigating the structure and composition of quantum dots are discussed, w...
A long-standing mystery in the field of semiconductor quantum dots (QDs) is: Why are there so many u...
The optoelectronic properties of capped tensile-strained Ge quantum dot (QD) was studied with differ...
Size and strain rate effects are among several factors which play an important role in determining t...
The Eshelby formalism for inclusion/inhomogeneity problems is extended to the nano-scale at which su...
Group IV (Si, Ge, Sn) alloys are promising materials for future optoelectronic devices. Their compat...
An array of semiconductor quantum dots is studied computationally using an approach that couples lin...
We present a short review of alloying in uncapped self-organized semiconductor heteronanos-tructures...
Stress and strain in the structure of self-assembled quantum dots constructed in the Ge/Si(001) syst...
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmi...
The formation of core/shell structures has become an established approach to passivate the surface a...
A novel peak finding method to map the strain from high resolution transmission electron micrographs...
The composition profile of a pyramid-shaped Ge(Si)/Si(001) quantum dot has been calculated using a c...
In this study, the significant effect of the nonuniform composition in alloy quantum dots (QDs) on e...
We present first a compatibility equation for the misfit strains induced in alloyed quantum dots (QD...
A number of methods for investigating the structure and composition of quantum dots are discussed, w...
A long-standing mystery in the field of semiconductor quantum dots (QDs) is: Why are there so many u...
The optoelectronic properties of capped tensile-strained Ge quantum dot (QD) was studied with differ...
Size and strain rate effects are among several factors which play an important role in determining t...
The Eshelby formalism for inclusion/inhomogeneity problems is extended to the nano-scale at which su...
Group IV (Si, Ge, Sn) alloys are promising materials for future optoelectronic devices. Their compat...
An array of semiconductor quantum dots is studied computationally using an approach that couples lin...
We present a short review of alloying in uncapped self-organized semiconductor heteronanos-tructures...
Stress and strain in the structure of self-assembled quantum dots constructed in the Ge/Si(001) syst...
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmi...
The formation of core/shell structures has become an established approach to passivate the surface a...
A novel peak finding method to map the strain from high resolution transmission electron micrographs...