Pulsed electron paramagnetic resonance spectroscopy of the photoexcited, metastable triplet state of the oxygen-vacancy center in silicon reveals that the lifetime of the m(s)=±1 sublevels differs significantly from that of the m(s)=0 state. We exploit this significant difference in decay rates to the ground singlet state to achieve nearly ~100% electron-spin polarization within the triplet. We further demonstrate the transfer of a coherent state of the triplet electron spin to, and from, a hyperfine-coupled, nearest-neighbor (29)Si nuclear spin. We measure the coherence time of the (29)Si nuclear spin employed in this operation and find it to be unaffected by the presence of the triplet electron spin and equal to the bulk value measured by...
A quantum computer requires a quantum system that is isolated from its environment, but can be integ...
Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at ...
Spin properties of donor impurities in silicon have been investigated by electron spin resonance (ES...
We investigate spin coherence time of electrons bound to phosphorus donors in silicon sin-gle crysta...
Silicon has been the backbone of the microelectronics industry for decades. As spin-based technologi...
© 2014 American Physical Society. Efficient manipulation of nuclear spins is important for utilizing...
We report on a pulsed electron paramagnetic resonance (EPR) study of the photoexcited triplet state ...
A quantum computer requires systems that are isolated from their environment, but can be integrated ...
© 2015 American Physical Society. We demonstrate an efficient control of Si29 nuclear spins for spec...
Silicon is one of the most promising semiconductor materials for spin-based information processing d...
Color centers in wide-bandgap semiconductors, including diamond and silicon carbide (SiC), are attra...
We study the low-temperature dynamics of a shallow donor, e.g., 31P, impurity electron spin in silic...
Donors in silicon, which combine an electron and nuclear spin, are some of the most promising candid...
While many defects in silicon provide long-lived spin qubits, it remains difficult to use them as th...
The size of silicon transistors used in microelectronic devices is shrinking to the level where quan...
A quantum computer requires a quantum system that is isolated from its environment, but can be integ...
Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at ...
Spin properties of donor impurities in silicon have been investigated by electron spin resonance (ES...
We investigate spin coherence time of electrons bound to phosphorus donors in silicon sin-gle crysta...
Silicon has been the backbone of the microelectronics industry for decades. As spin-based technologi...
© 2014 American Physical Society. Efficient manipulation of nuclear spins is important for utilizing...
We report on a pulsed electron paramagnetic resonance (EPR) study of the photoexcited triplet state ...
A quantum computer requires systems that are isolated from their environment, but can be integrated ...
© 2015 American Physical Society. We demonstrate an efficient control of Si29 nuclear spins for spec...
Silicon is one of the most promising semiconductor materials for spin-based information processing d...
Color centers in wide-bandgap semiconductors, including diamond and silicon carbide (SiC), are attra...
We study the low-temperature dynamics of a shallow donor, e.g., 31P, impurity electron spin in silic...
Donors in silicon, which combine an electron and nuclear spin, are some of the most promising candid...
While many defects in silicon provide long-lived spin qubits, it remains difficult to use them as th...
The size of silicon transistors used in microelectronic devices is shrinking to the level where quan...
A quantum computer requires a quantum system that is isolated from its environment, but can be integ...
Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at ...
Spin properties of donor impurities in silicon have been investigated by electron spin resonance (ES...