We report on the use of interferometric autocorrelation measurements to investigate the non-linear absorption processes evident in single InGaN/GaN quantum dots. The near quadratic excitation intensity dependence of the photoluminescence signal in conjunction with the asymmetric collinear autocorrelation trace unambiguously confirms the process as being one involving two photons via an intermediate virtual state. These results highlight the inherently non-linear optical properties of these structures
We report on excitonic single photon emission and biexcitonic photon bunching from an InGaN quantum ...
Experimental investigations of the optical properties of InGaN/GaN quantum dots are presented. A pul...
We report high-resolution spectroscopy by interferometric correlation measurements on the photolumin...
The exact mechanism for non-linear sub-bandgap excitation of single InGaN quantum dots (QDs) has bee...
Nficro-photoluminescence properties of single InGaN/GaN quantum dots (QDs) are investigated using su...
We present a study of the time-integrated and time-resolved photoluminescence properties of single-I...
We report an observation of efficient two-photon photoluminescence (TPL) of InGaN/GaN multi-quantum-...
We report an observation of efficient two-photon photoluminescence (TPL) of InGaN/GaN multi-quantum-...
We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots usi...
We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots usi...
A detailed temporal analysis of the spectral diffusion phenomenon in single photon emitting InGaN/Ga...
Autocorrelation measurements are used to reveal the spectral diffusion time scale in the s...
We report on the observation of linearly polarized single photon antibunching in the excitonic emiss...
Experimental investigations of single InGaN/GaN quantum dots grown on the non-polar (11-20) plane ar...
In many InGaN/GaN single photon emitting structures, significant contamination of the single photon ...
We report on excitonic single photon emission and biexcitonic photon bunching from an InGaN quantum ...
Experimental investigations of the optical properties of InGaN/GaN quantum dots are presented. A pul...
We report high-resolution spectroscopy by interferometric correlation measurements on the photolumin...
The exact mechanism for non-linear sub-bandgap excitation of single InGaN quantum dots (QDs) has bee...
Nficro-photoluminescence properties of single InGaN/GaN quantum dots (QDs) are investigated using su...
We present a study of the time-integrated and time-resolved photoluminescence properties of single-I...
We report an observation of efficient two-photon photoluminescence (TPL) of InGaN/GaN multi-quantum-...
We report an observation of efficient two-photon photoluminescence (TPL) of InGaN/GaN multi-quantum-...
We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots usi...
We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots usi...
A detailed temporal analysis of the spectral diffusion phenomenon in single photon emitting InGaN/Ga...
Autocorrelation measurements are used to reveal the spectral diffusion time scale in the s...
We report on the observation of linearly polarized single photon antibunching in the excitonic emiss...
Experimental investigations of single InGaN/GaN quantum dots grown on the non-polar (11-20) plane ar...
In many InGaN/GaN single photon emitting structures, significant contamination of the single photon ...
We report on excitonic single photon emission and biexcitonic photon bunching from an InGaN quantum ...
Experimental investigations of the optical properties of InGaN/GaN quantum dots are presented. A pul...
We report high-resolution spectroscopy by interferometric correlation measurements on the photolumin...