Shielded hydrogen passivation (SHP) is a recently developed technique for introducing atomic hydrogen into materials and it offers significant advantages over the other hydrogenation techniques. Hydrogen de‐activation of boron followed by electrochemical CV profiling was used to demonstrate that substantial quantities of atomic hydrogen can permeate though palladium/silver alloy foils which are 10 µm thick. It is thought that such thickness will be sufficient to withstand pressures of up to 1 atmosphere allowing passivation in an in‐line process. Further, it is shown that poisoning of the foil by using sulphur increases the flux of atomic hydrogen released. SHP delivers extremely good passivation of SiO2‐Si interfaces, as demonstrated by us...
International audienceHfO2 synthesized by atomic layer deposition (ALD) can be used as a passivation...
Due to emitter damage at the surface, hydrogen passivation of polycrystalline silicon solar cells by...
The effect of H plasma exposure parameters, such as power, pressure and temperature, on the Si-SiO2 ...
This paper reports a new approach for exposing materials, including solar cell structures, to atomic...
Improving the efficiency of solar cells will play a key role in ensuring that solar generated power ...
Shielded Hydrogen Passivation (SHP) has been shown to be an effective technique to introduce atomic ...
Palladium membranes have been used for decades for the separation of hydrogen from other gasses. In ...
The influence of atomic hydrogen on the surface passivation of the Si-SiO2 interface is investigated...
The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) film...
We report detailed studies of hydrogen passivation of polycrystalline silicon wafers by RF plasma an...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...
L'effet de l'hydrogène atomique sur les joints de grains dans le silicium est passé en revue ainsi q...
The result of this study shows that hydrogen atoms passivate copper-related defects (E//T//1 equals ...
We present an alternative method of depositing a high-quality passivation film for heterojunction si...
The effects of hydrogen treatment on electrical properties, luminescence spectra, and deep traps in ...
International audienceHfO2 synthesized by atomic layer deposition (ALD) can be used as a passivation...
Due to emitter damage at the surface, hydrogen passivation of polycrystalline silicon solar cells by...
The effect of H plasma exposure parameters, such as power, pressure and temperature, on the Si-SiO2 ...
This paper reports a new approach for exposing materials, including solar cell structures, to atomic...
Improving the efficiency of solar cells will play a key role in ensuring that solar generated power ...
Shielded Hydrogen Passivation (SHP) has been shown to be an effective technique to introduce atomic ...
Palladium membranes have been used for decades for the separation of hydrogen from other gasses. In ...
The influence of atomic hydrogen on the surface passivation of the Si-SiO2 interface is investigated...
The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) film...
We report detailed studies of hydrogen passivation of polycrystalline silicon wafers by RF plasma an...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...
L'effet de l'hydrogène atomique sur les joints de grains dans le silicium est passé en revue ainsi q...
The result of this study shows that hydrogen atoms passivate copper-related defects (E//T//1 equals ...
We present an alternative method of depositing a high-quality passivation film for heterojunction si...
The effects of hydrogen treatment on electrical properties, luminescence spectra, and deep traps in ...
International audienceHfO2 synthesized by atomic layer deposition (ALD) can be used as a passivation...
Due to emitter damage at the surface, hydrogen passivation of polycrystalline silicon solar cells by...
The effect of H plasma exposure parameters, such as power, pressure and temperature, on the Si-SiO2 ...