Enhanced coherent THz emission from (100) GaAs in the presence of a magnetic field

Corchia, A
McLaughlin, R
Ciesla, CM
Johnston, MB
Arnone, DD
Linfield, EH
Davies, AG
Simmons, MY
Pepper, M

Publication date

January 2000

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

The effects of magnetic fields up to 8T on the THz emission from a bulk (100) n-type molecular beam epitaxy (MBE)-grown GaAs sample were studied. Magnetic field was applied in the plane of incidence parallel to the reflected THz beam. The emitted THz radiation was measured both by an incoherent bolometer detection scheme and coherent free-space electro-optic (EOS) sampling. Overall, significant data was obtained

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Enhanced coherent THz emission from (100) GaAs in the presence of a magnetic field

Abstract

Extracted data

Enhanced coherent THz emission from (100) GaAs in the presence of a magnetic field

Abstract

Extracted data

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