Vickers micro-indentation tests have been performed in the temperature range 20 to 420° C on the {0 0 1} surfaces of germanium crystals of three different dopings: "intrinsic", heavily doped p-type and heavily doped n-type. Indentation sizes, dislocation rosette sizes and median/radial crack lengths were measured. Rosette sizes were found to depend strongly on doping, being respectively larger and smaller than in intrinsic material for n-type and p-type specimens, over the temperature range 20 to 420° C. This result correlates well with dislocation velocity measurements in germanium. Indentation size (hardness) was found to vary with doping above ~ 300° C, hardness increasing from n-type through intrinsic to p-type material. Crack lengths, ...
Measurements of the ductile-brittle transition temperature of heavily doped silicon were carried out...
Owing to its favorable material properties, tungsten (W) has been studied as a plasma-facing materia...
Dislocation velocities in semiconductors depend strongly on the concentration of electrically active...
This research focuses on determining the mechanical properties of germanium. Micro-hardness, Fractur...
Germanium (Ge), a Group IV elemental semiconductor, is an important electronic material used in many...
The strain-time characteristics of germanium crystals bent by a constant four point load were studie...
Germanium displays enhanced carrier mobility under mechanical straining, which makes it an important...
In this paper, we present the results of microhardness tests performed by Vickers indentation of ger...
Germanium is extensively used as a substrate in functional components of devices and microelectromec...
Three-dimensional distribution patterns of the strain and dislocations developed around indented are...
The stress-strain characteristics and the development of the dislocation structure in germanium crys...
Most indentation studies to date on crystalline germanium (c-Ge) and related covalent semiconductors...
Hardness tests have the potential to provide a simple means of investigating the mechanical properti...
A microindentation-based technique has been developed to investigate the influence of doping on disl...
We present compression and instrumented indentation experiments on high-purity Indium, at temperatur...
Measurements of the ductile-brittle transition temperature of heavily doped silicon were carried out...
Owing to its favorable material properties, tungsten (W) has been studied as a plasma-facing materia...
Dislocation velocities in semiconductors depend strongly on the concentration of electrically active...
This research focuses on determining the mechanical properties of germanium. Micro-hardness, Fractur...
Germanium (Ge), a Group IV elemental semiconductor, is an important electronic material used in many...
The strain-time characteristics of germanium crystals bent by a constant four point load were studie...
Germanium displays enhanced carrier mobility under mechanical straining, which makes it an important...
In this paper, we present the results of microhardness tests performed by Vickers indentation of ger...
Germanium is extensively used as a substrate in functional components of devices and microelectromec...
Three-dimensional distribution patterns of the strain and dislocations developed around indented are...
The stress-strain characteristics and the development of the dislocation structure in germanium crys...
Most indentation studies to date on crystalline germanium (c-Ge) and related covalent semiconductors...
Hardness tests have the potential to provide a simple means of investigating the mechanical properti...
A microindentation-based technique has been developed to investigate the influence of doping on disl...
We present compression and instrumented indentation experiments on high-purity Indium, at temperatur...
Measurements of the ductile-brittle transition temperature of heavily doped silicon were carried out...
Owing to its favorable material properties, tungsten (W) has been studied as a plasma-facing materia...
Dislocation velocities in semiconductors depend strongly on the concentration of electrically active...