Add to ORKGRaman scattering in ion-implanted GaN / B. Rauschenbach ... - In: Applied physics letters. 72. 1998. S. 2589-259
The Micro-Raman scattering technique has been used for the study of GaN and ZnO. Capabilities of the...
Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energie...
We performed resonant Raman scattering in hexagonal GaN using discrete laser lines in the violet and...
Raman scattering in ion-implanted GaN / B. Rauschenbach ... - In: Applied physics letters. 72. 1998....
Raman spectroscopy measurements were performed on GaN samples before and after ion implantation. The...
Lattice expansion of Ca and Ar ion implanted GaN / B. Rauschenbach ... - In: Applied physics letters...
Ion implantation in GaN at liquid-nitrogen temperature : structural characteristics and amorphizatio...
We have investigated the Raman scattering spectra in C-implanted GaN epilayers. (a) In as-implanted ...
Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitati...
International audienceAr+ ions were implanted at room temperature in n-type hexagonal GaN for device...
Introduction Resonance effects in light scattering from solids occur in the range of frequencies of ...
We present a detailed study of GaN pillar arrays by atomic force microscopy (AFM), Raman spectroscop...
160 keV Ar+ ions were homogeneously implanted in AlGaN at room temperature for device isolation purp...
We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ra...
Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purpose...
The Micro-Raman scattering technique has been used for the study of GaN and ZnO. Capabilities of the...
Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energie...
We performed resonant Raman scattering in hexagonal GaN using discrete laser lines in the violet and...
Raman scattering in ion-implanted GaN / B. Rauschenbach ... - In: Applied physics letters. 72. 1998....
Raman spectroscopy measurements were performed on GaN samples before and after ion implantation. The...
Lattice expansion of Ca and Ar ion implanted GaN / B. Rauschenbach ... - In: Applied physics letters...
Ion implantation in GaN at liquid-nitrogen temperature : structural characteristics and amorphizatio...
We have investigated the Raman scattering spectra in C-implanted GaN epilayers. (a) In as-implanted ...
Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitati...
International audienceAr+ ions were implanted at room temperature in n-type hexagonal GaN for device...
Introduction Resonance effects in light scattering from solids occur in the range of frequencies of ...
We present a detailed study of GaN pillar arrays by atomic force microscopy (AFM), Raman spectroscop...
160 keV Ar+ ions were homogeneously implanted in AlGaN at room temperature for device isolation purp...
We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ra...
Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purpose...
The Micro-Raman scattering technique has been used for the study of GaN and ZnO. Capabilities of the...
Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energie...
We performed resonant Raman scattering in hexagonal GaN using discrete laser lines in the violet and...