Add to ORKGLattice expansion of Ca and Ar ion implanted GaN / B. Rauschenbach ... - In: Applied physics letters. 71. 1997. S. 2313-231
In this letter, we report the results of ion implantation of GaN using "Si and 23Mg species. Structu...
Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation rema...
Lattice damage of relaxed Si1-xGex alloys of various composition implanted with 2 MeV Si ions. - In:...
Lattice expansion of Ca and Ar ion implanted GaN / B. Rauschenbach ... - In: Applied physics letters...
Characterization of Ca and C implanted GaN / B. Rauschenbach ... - In: Materials science and enginee...
Ion implantation in GaN at liquid-nitrogen temperature : structural characteristics and amorphizatio...
Raman scattering in ion-implanted GaN / B. Rauschenbach ... - In: Applied physics letters. 72. 1998....
This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al(2)O(3) by m...
140keV Zn channeled implantations in GaN are performed at room temperature and in a dose range from ...
We report on the lattice location of ion-implanted Ca and Sr in thin films of single-crystalline wur...
Single crystalline GaN samples were implanted with several fluences of Ca ions at room temperature (...
III-N photonic devices have made great advances in recent years following the demonstration of dopin...
This paper deals with the results of a systematic investigation of damage generation and accumulatio...
In this letter, we report the results of ion implantation of GaN using "Si and 23Mg species. Structu...
Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation rema...
Lattice damage of relaxed Si1-xGex alloys of various composition implanted with 2 MeV Si ions. - In:...
Lattice expansion of Ca and Ar ion implanted GaN / B. Rauschenbach ... - In: Applied physics letters...
Characterization of Ca and C implanted GaN / B. Rauschenbach ... - In: Materials science and enginee...
Ion implantation in GaN at liquid-nitrogen temperature : structural characteristics and amorphizatio...
Raman scattering in ion-implanted GaN / B. Rauschenbach ... - In: Applied physics letters. 72. 1998....
This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al(2)O(3) by m...
140keV Zn channeled implantations in GaN are performed at room temperature and in a dose range from ...
We report on the lattice location of ion-implanted Ca and Sr in thin films of single-crystalline wur...
Single crystalline GaN samples were implanted with several fluences of Ca ions at room temperature (...
III-N photonic devices have made great advances in recent years following the demonstration of dopin...
This paper deals with the results of a systematic investigation of damage generation and accumulatio...
In this letter, we report the results of ion implantation of GaN using "Si and 23Mg species. Structu...
Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation rema...
Lattice damage of relaxed Si1-xGex alloys of various composition implanted with 2 MeV Si ions. - In:...