Add to ORKGInvestigation on metallurgical properties and electromigration in AlCu metallizations for VLSI applications / M. Moske ... - In: Thin solid films. 275. 1996. S. 159-16
The resistance noise associated with electromigration in Al-Cu lines has been simulated
Various physical mechanisms are involved in an electromigration (EM) process occurring in metal thin...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Investigation on metallurgical properties and electromigration in AlCu metallizations for VLSI appli...
Various thin film metallizations were tested in order to gain insight into their performance as VLSI...
The effects of premetalization cleaning on electromigration in Al-Si thin films was studied. Premeta...
Aluminium and aluminium alloys have been widely used as the interconnection materials to link transi...
A brief review is given of models which propose a correlation between electromigration resistance an...
In this dissertation, the effects of temperature and interconnect properties on copper metallization...
This project studies copper electromigration reliability with the help of engineers of Chartered Sem...
As the circuit density of electric equipment steadily increases, metallization processes demand new ...
Because of concerns about its reliability and its effects on the speed of electronic devices, seriou...
As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become...
The chemical mechanical planarization (CMP) process is critical in fabricating ultra large scale int...
This paper describes fine-grained Mg containing A1-Si alloys, which have an electromigration resista...
The resistance noise associated with electromigration in Al-Cu lines has been simulated
Various physical mechanisms are involved in an electromigration (EM) process occurring in metal thin...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Investigation on metallurgical properties and electromigration in AlCu metallizations for VLSI appli...
Various thin film metallizations were tested in order to gain insight into their performance as VLSI...
The effects of premetalization cleaning on electromigration in Al-Si thin films was studied. Premeta...
Aluminium and aluminium alloys have been widely used as the interconnection materials to link transi...
A brief review is given of models which propose a correlation between electromigration resistance an...
In this dissertation, the effects of temperature and interconnect properties on copper metallization...
This project studies copper electromigration reliability with the help of engineers of Chartered Sem...
As the circuit density of electric equipment steadily increases, metallization processes demand new ...
Because of concerns about its reliability and its effects on the speed of electronic devices, seriou...
As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become...
The chemical mechanical planarization (CMP) process is critical in fabricating ultra large scale int...
This paper describes fine-grained Mg containing A1-Si alloys, which have an electromigration resista...
The resistance noise associated with electromigration in Al-Cu lines has been simulated
Various physical mechanisms are involved in an electromigration (EM) process occurring in metal thin...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...