Add to ORKGInvestigation on metallurgical properties and electromigration in AlCu metallizations for VLSI applications / S. Dietrich ... - In: Thin solid films. 275. 1996. S. 159-16
Divergence of atomic flux due to electromigration has been formulated for Al polycrystalline line co...
The goal of this project was to study the feasibility of Copper line metallizations for sub-0.5 #mu#...
The chemical mechanical planarization (CMP) process is critical in fabricating ultra large scale int...
Investigation on metallurgical properties and electromigration in AlCu metallizations for VLSI appli...
Various thin film metallizations were tested in order to gain insight into their performance as VLSI...
Aluminium and aluminium alloys have been widely used as the interconnection materials to link transi...
The effects of premetalization cleaning on electromigration in Al-Si thin films was studied. Premeta...
A brief review is given of models which propose a correlation between electromigration resistance an...
In this dissertation, the effects of temperature and interconnect properties on copper metallization...
As the circuit density of electric equipment steadily increases, metallization processes demand new ...
As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become...
The corrosion susceptibility of Al thin-film metallizations in an aqueous solution containing chlori...
Electromigration (EM) tests on Cu thin film circuits below or near 373 K with the current density be...
The trend in integrated circuit (IC) technology is beginning to move from very large-scale integrati...
Because of concerns about its reliability and its effects on the speed of electronic devices, seriou...
Divergence of atomic flux due to electromigration has been formulated for Al polycrystalline line co...
The goal of this project was to study the feasibility of Copper line metallizations for sub-0.5 #mu#...
The chemical mechanical planarization (CMP) process is critical in fabricating ultra large scale int...
Investigation on metallurgical properties and electromigration in AlCu metallizations for VLSI appli...
Various thin film metallizations were tested in order to gain insight into their performance as VLSI...
Aluminium and aluminium alloys have been widely used as the interconnection materials to link transi...
The effects of premetalization cleaning on electromigration in Al-Si thin films was studied. Premeta...
A brief review is given of models which propose a correlation between electromigration resistance an...
In this dissertation, the effects of temperature and interconnect properties on copper metallization...
As the circuit density of electric equipment steadily increases, metallization processes demand new ...
As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become...
The corrosion susceptibility of Al thin-film metallizations in an aqueous solution containing chlori...
Electromigration (EM) tests on Cu thin film circuits below or near 373 K with the current density be...
The trend in integrated circuit (IC) technology is beginning to move from very large-scale integrati...
Because of concerns about its reliability and its effects on the speed of electronic devices, seriou...
Divergence of atomic flux due to electromigration has been formulated for Al polycrystalline line co...
The goal of this project was to study the feasibility of Copper line metallizations for sub-0.5 #mu#...
The chemical mechanical planarization (CMP) process is critical in fabricating ultra large scale int...