The activation energy of GeO2 was studied by determining the oxide thickness versus temperature from lower to higher oxidation temperature in the range between 450˚C and 600Ԩ. It was found that a linear relationship can be obtained between oxidation time and oxide thickness for the oxidation temperature between 450 and 575Ԩ while for the 600Ԩ ��������, a linear relationship can be obtained for the shorter oxidation time. The rate of oxidation increased until 0.55 and abruptly decreased after increasing oxidation temperature to 600Ԩ which implies that the oxygen intermixing occurs during higher oxidation (600Ԩ) rather that diffusion mechanism that leads to the lower activation energy
Properties of Ge oxides are significantly different from those of widely used Si oxides. For example...
Since the mid-20th century, the electronics industry has enjoyed a phenomenal growth and is now one ...
We have studied the oxidation behaviour of 350 nm thick films of Si0.5Ge0.5 alloy grown on Si(100) s...
We have studied Ge gate stacks for many years, and demonstrated very interesting properties in Ge [1...
Despite the fact that germanium played a significant role in the advent of modern electronics, silic...
This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium lay...
Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigat...
Density functional modeling is used to show that germanium oxidation occurs by the diffusion of netw...
Atomic-scale models of the abrupt high-k/Ge interface with a range of suboxide stoichiometries GeO(x...
In this paper, passivation of Ge substrates by N2O plasma is proposed and compared with a N2 plasma ...
The electron cyclotron resonance (ECR) plasmaoxidation and thermal oxidation mechanisms for germaniu...
We review a series of first-principles studies on the defect generation mechanism and electronic str...
The thermal stability of GeO2 formed by oxygen implantation into Si0.5Ge0.5 alloy has been investiga...
Searching for high-κ gate oxide has been an important task in the semiconductor industry for further...
In this paper, passivation of Ge substrates by N2O plasma is proposed and compared with a N2 plasma ...
Properties of Ge oxides are significantly different from those of widely used Si oxides. For example...
Since the mid-20th century, the electronics industry has enjoyed a phenomenal growth and is now one ...
We have studied the oxidation behaviour of 350 nm thick films of Si0.5Ge0.5 alloy grown on Si(100) s...
We have studied Ge gate stacks for many years, and demonstrated very interesting properties in Ge [1...
Despite the fact that germanium played a significant role in the advent of modern electronics, silic...
This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium lay...
Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigat...
Density functional modeling is used to show that germanium oxidation occurs by the diffusion of netw...
Atomic-scale models of the abrupt high-k/Ge interface with a range of suboxide stoichiometries GeO(x...
In this paper, passivation of Ge substrates by N2O plasma is proposed and compared with a N2 plasma ...
The electron cyclotron resonance (ECR) plasmaoxidation and thermal oxidation mechanisms for germaniu...
We review a series of first-principles studies on the defect generation mechanism and electronic str...
The thermal stability of GeO2 formed by oxygen implantation into Si0.5Ge0.5 alloy has been investiga...
Searching for high-κ gate oxide has been an important task in the semiconductor industry for further...
In this paper, passivation of Ge substrates by N2O plasma is proposed and compared with a N2 plasma ...
Properties of Ge oxides are significantly different from those of widely used Si oxides. For example...
Since the mid-20th century, the electronics industry has enjoyed a phenomenal growth and is now one ...
We have studied the oxidation behaviour of 350 nm thick films of Si0.5Ge0.5 alloy grown on Si(100) s...