Add to ORKGScanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast between differently doped areas is observable in the secondary electron emission. Quantitative relation exists between the image contrast and the dopant concentration. However, further examination has shown the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of ad-layers on the semiconductor surface
The topic of work is study of semiconductor structure with defined doped areas by SEM with slow elec...
The topic of the work is study of one technological layer of semiconductor structure with delimited ...
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayer...
The incorporation of impurity (i.e. dopant) atoms in semiconducting materials is fundamental to all ...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structu...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
Secondary electron (SE) image contrast from p-type silicon has been studied using field-emission sca...
The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopan...
One of the ten most important challenges facing the semiconductor industry is to obtain an accurate ...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a use...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a usef...
There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling ...
The dopant contrast in SEM has now been studied for more than a decade, a clear explanation of it re...
We show that, in scanning electron microscopy, it is possible to use the secondary electrons produce...
The topic of work is study of semiconductor structure with defined doped areas by SEM with slow elec...
The topic of the work is study of one technological layer of semiconductor structure with delimited ...
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayer...
The incorporation of impurity (i.e. dopant) atoms in semiconducting materials is fundamental to all ...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structu...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
Secondary electron (SE) image contrast from p-type silicon has been studied using field-emission sca...
The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopan...
One of the ten most important challenges facing the semiconductor industry is to obtain an accurate ...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a use...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a usef...
There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling ...
The dopant contrast in SEM has now been studied for more than a decade, a clear explanation of it re...
We show that, in scanning electron microscopy, it is possible to use the secondary electrons produce...
The topic of work is study of semiconductor structure with defined doped areas by SEM with slow elec...
The topic of the work is study of one technological layer of semiconductor structure with delimited ...
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayer...